BCW60CE6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Last Time Buy
Supplier Device Package: PG-SOT23
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BCW60CE6327HTSA1 Infineon Technologies
Description: TRANS NPN 32V 0.1A PG-SOT23, Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Last Time Buy, Supplier Device Package: PG-SOT23, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V, Current - Collector Cutoff (Max): 20nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BCW60CE6327HTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BCW60CE6327HTSA1 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
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