BCY58-VIII PBFREE Central Semiconductor
| Кількість | Ціна |
|---|---|
| 2+ | 162.93 грн |
| 10+ | 132.50 грн |
| 100+ | 92.17 грн |
| 250+ | 85.19 грн |
| 500+ | 76.81 грн |
| 1000+ | 65.92 грн |
| 2000+ | 62.64 грн |
Відгуки про товар
Написати відгук
Технічний опис BCY58-VIII PBFREE Central Semiconductor
Description: 32V 100MA 340MW TH TRANSISTOR-SM, Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Box, Supplier Device Package: TO-18, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 32 V, Current - Collector (Ic) (Max): 100 mA, Frequency - Transition: 150MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V, Current - Collector Cutoff (Max): 10nA (ICBO).
Інші пропозиції BCY58-VIII PBFREE
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
BCY58-VIII PBFREE | Central Semiconductor Corp |
Description: 32V 100MA 340MW TH TRANSISTOR-SM Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Box Supplier Device Package: TO-18 Power - Max: 340 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Current - Collector Cutoff (Max): 10nA (ICBO) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| BCY58-VIII PBFREE |
Виробник: Central Semiconductor Corp
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Description: 32V 100MA 340MW TH TRANSISTOR-SM
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Box
Supplier Device Package: TO-18
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.