Технічний опис BD537 STMicroelectronics
Description: TRANS NPN 80V 8A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 50 W.
Інші пропозиції BD537
| Фото | Назва | Виробник | Інформація |
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BD537 | Виробник : STMicroelectronics |
 Description: TRANS NPN 80V 8A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2A, 2V Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
товару немає в наявності |
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BD537 | Виробник : STMicroelectronics |
Bipolar Transistors - BJT NPN General Purpose |
товару немає в наявності |
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| BD537 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
товару немає в наявності |
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BD537 | Виробник : STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 4A; 40W; TO220 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 4A Case: TO220 Mounting: THT Frequency: 4MHz Power: 40W |
товару немає в наявності |