Технічний опис BD538K
Description: TRANS PNP 80V 8A TO-220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V, Frequency - Transition: 12MHz, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 50 W.
Інші пропозиції BD538K
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
BD538K | onsemi |
Description: TRANS PNP 80V 8A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 12MHz Supplier Device Package: TO-220-3 Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. |
|
BD538K | onsemi / Fairchild |
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| BD538K |
![]() |
Виробник: onsemi
Description: TRANS PNP 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 12MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS PNP 80V 8A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 12MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| BD538K |
![]() |
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor
Bipolar Transistors - BJT PNP Epitaxial Silicon Transistor
товару немає в наявності
В кошику
од. на суму грн.




