BDP954E6327

BDP954E6327 Infineon Technologies


INFNS12468-1.pdf?t.download=true&u=5oefqw Виробник: Infineon Technologies
Description: GENERAL PURPOSE TRANSISTOR
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 5 W
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Технічний опис BDP954E6327 Infineon Technologies

Description: GENERAL PURPOSE TRANSISTOR, Packaging: Bulk, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: PG-SOT223-4, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 5 W.

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BDP 954 E6327 BDP 954 E6327 Виробник : Infineon Technologies Infineon-BDP948_BDP950_BDP954-DS-v01_01-en-1226147.pdf Bipolar Transistors - BJT PNP Silicon AF Power TRANSISTOR
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