BDP948E6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRANS PNP 45V 3A SOT223-4
Power - Max: 5 W
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4-10
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Технічний опис BDP948E6327HTSA1 Infineon Technologies
Description: TRANS PNP 45V 3A SOT223-4, Power - Max: 5 W, Voltage - Collector Emitter Breakdown (Max): 45 V, Current - Collector (Ic) (Max): 3 A, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4-10, Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Інші пропозиції BDP948E6327HTSA1
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BDP948E6327HTSA1 | Виробник : Infineon Technologies |
Description: TRANS PNP 45V 3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 100MHz Supplier Device Package: PG-SOT223-4-10 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 5 W |
товару немає в наявності |