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BF517E6327HTSA1

BF517E6327HTSA1 Infineon Technologies

Part_Number_Guide_Web.pdf
Виробник: Infineon Technologies
Description: TRANS NPN 15V 0.025A SOT23
Power - Max: 280 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 25 mA
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Frequency - Transition: 2.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BF517E6327HTSA1 Infineon Technologies

Description: TRANS NPN 15V 0.025A SOT23, Power - Max: 280 mW, Voltage - Collector Emitter Breakdown (Max): 15 V, Current - Collector (Ic) (Max): 25 mA, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Frequency - Transition: 2.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).