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BF799E6327HTSA1 ROCHESTER ELECTRONICS

INFNS17221-1.pdf?t.download=true&u=5oefqw
Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - BF799E6327HTSA1 - BF799 HIGH LINEARITY SI- AND SIGEC-TRA
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 886 шт:
термін постачання 21-31 дні (днів)
Мінімальне замовлення: 886 шт
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Технічний опис BF799E6327HTSA1 ROCHESTER ELECTRONICS

Description: RF TRANS NPN 20V 800MHZ SOT23-3, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Frequency - Transition: 800MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 35mA, Power - Max: 280mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

Інші пропозиції BF799E6327HTSA1

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
BF799E6327HTSA1 BF799E6327HTSA1 Infineon Technologies BF799.pdf Description: RF TRANS NPN 20V 800MHZ SOT23-3
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Frequency - Transition: 800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 35mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BF799E6327HTSA1 BF799E6327HTSA1 Infineon Technologies BF799.pdf Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
BF799E6327HTSA1 BF799.pdf
BF799E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Frequency - Transition: 800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 35mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику  од. на суму  грн.
BF799E6327HTSA1 BF799.pdf
BF799E6327HTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 20V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Frequency - Transition: 800MHz
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Supplier Device Package: PG-SOT23
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.