BF799E6327HTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Frequency - Transition: 800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 35mA
Power - Max: 280mW
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис BF799E6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 20V 800MHZ SOT23-3, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Noise Figure (dB Typ @ f): 3dB @ 100MHz, Frequency - Transition: 800MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Voltage - Collector Emitter Breakdown (Max): 20V, Current - Collector (Ic) (Max): 35mA, Power - Max: 280mW, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції BF799E6327HTSA1
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BF799E6327HTSA1 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 20V 800MHZ SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 20V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Frequency - Transition: 800MHz Noise Figure (dB Typ @ f): 3dB @ 100MHz Supplier Device Package: PG-SOT23 Part Status: Obsolete |
товару немає в наявності |