Технічний опис BF821-QVL Nexperia
Description: BF821-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V, Frequency - Transition: 60MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 50 mA, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 250 mW.
Інші пропозиції BF821-QVL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| BF821-QVL | Виробник : NEXPERIA |
 Trans GP BJT PNP 300V 0.05A 250mW |
товар відсутній |
||
 |
BF821-QVL | Виробник : Nexperia USA Inc. |
Description: BF821-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V Frequency - Transition: 60MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 250 mW |
товар відсутній |
|
 |
BF821-QVL | Виробник : Nexperia |
Bipolar Transistors - BJT BF821-Q/SOT23/TO-236AB |
товар відсутній |