BFG10/X,215

BFG10/X,215 NXP USA Inc.


BFG10(X)_Rev5.pdf Виробник: NXP USA Inc.
Description: RF TRANS NPN 8V 1.9GHZ SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 7dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 1.9GHz
Supplier Device Package: SOT-143B
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Технічний опис BFG10/X,215 NXP USA Inc.

Description: RF TRANS NPN 8V 1.9GHZ SOT143B, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Gain: 7dB, Power - Max: 400mW, Current - Collector (Ic) (Max): 250mA, Voltage - Collector Emitter Breakdown (Max): 8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V, Frequency - Transition: 1.9GHz, Supplier Device Package: SOT-143B.

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BFG10/X,215 BFG10/X,215 Виробник : NXP USA Inc. BFG10(X)_Rev5.pdf Description: RF TRANS NPN 8V 1.9GHZ SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 7dB
Power - Max: 400mW
Current - Collector (Ic) (Max): 250mA
Voltage - Collector Emitter Breakdown (Max): 8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Frequency - Transition: 1.9GHz
Supplier Device Package: SOT-143B
товар відсутній
BFG10/X,215 BFG10/X,215 Виробник : NXP Semiconductors BFG10X_N-1125884.pdf RF Bipolar Transistors Single NPN 8V 250mA 400mW 25
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