BFG10W/X,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF TRANS NPN 10V 1.9GHZ 4SO
Supplier Device Package: 4-SO
Frequency - Transition: 1.9GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 250mA
Power - Max: 400mW
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-343 Reverse Pinning
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 533+ | 41.18 грн |
Відгуки про товар
Написати відгук
Технічний опис BFG10W/X,115 NXP USA Inc.
Description: RF TRANS NPN 10V 1.9GHZ 4SO, Supplier Device Package: 4-SO, Frequency - Transition: 1.9GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V, Voltage - Collector Emitter Breakdown (Max): 10V, Current - Collector (Ic) (Max): 250mA, Power - Max: 400mW, Operating Temperature: 175°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SOT-343 Reverse Pinning, Packaging: Tape & Reel (TR).
Інші пропозиції BFG10W/X,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
BFG10W/X,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 10V 1.9GHZ 4SOSupplier Device Package: 4-SO Frequency - Transition: 1.9GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 50mA, 5V Voltage - Collector Emitter Breakdown (Max): 10V Current - Collector (Ic) (Max): 250mA Power - Max: 400mW Operating Temperature: 175°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-343 Reverse Pinning Packaging: Tape & Reel (TR) |
товару немає в наявності |

