Технічний опис BFG25A/X,215 NXP Semiconductors
Description: RF TRANS NPN 5V 5GHZ SOT-143B, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 32mW, Current - Collector (Ic) (Max): 6.5mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz, Supplier Device Package: SOT-143B.
Інші пропозиції BFG25A/X,215
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BFG25A/X,215 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 5V 5GHZ SOT-143BPackaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 32mW Current - Collector (Ic) (Max): 6.5mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Supplier Device Package: SOT-143B |
товару немає в наявності |
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BFG25A/X,215 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 5V 5GHZ SOT-143B Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 32mW Current - Collector (Ic) (Max): 6.5mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.8dB ~ 2dB @ 1GHz Supplier Device Package: SOT-143B |
товару немає в наявності |
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BFG25A/X,215 | Виробник : NXP Semiconductors |
RF Bipolar Transistors TAPE-7 TNS-RFSS |
товару немає в наявності |