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BFG25AW/X,115

BFG25AW/X,115 NXP USA Inc.

BFG25AW_X_Rev_Oct2010.pdf Виробник: NXP USA Inc.
Description: RF TRANS NPN 5V 5GHZ 4SO
Packaging: Tape & Reel (TR)
Package / Case: SOT-343 Reverse Pinning
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 6.5mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz
Supplier Device Package: 4-SO
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Технічний опис BFG25AW/X,115 NXP USA Inc.

Description: RF TRANS NPN 5V 5GHZ 4SO, Packaging: Tape & Reel (TR), Package / Case: SOT-343 Reverse Pinning, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 6.5mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz, Supplier Device Package: 4-SO.