Технічний опис BFG25AW/X,115 NXP Semiconductors
Description: RF TRANS NPN 5V 5GHZ 4SO, Packaging: Tape & Reel (TR), Package / Case: SOT-343 Reverse Pinning, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 500mW, Current - Collector (Ic) (Max): 6.5mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V, Frequency - Transition: 5GHz, Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz, Supplier Device Package: 4-SO.
Інші пропозиції BFG25AW/X,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BFG25AW/X,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 5V 5GHZ 4SOPackaging: Tape & Reel (TR) Package / Case: SOT-343 Reverse Pinning Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 500mW Current - Collector (Ic) (Max): 6.5mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500µA, 1V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2dB @ 1GHz Supplier Device Package: 4-SO |
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