BFG310W/XR,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF TRANS NPN 6V 14GHZ CMPAK-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 18dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 2GHz
Supplier Device Package: CMPAK-4
Description: RF TRANS NPN 6V 14GHZ CMPAK-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Gain: 18dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 6V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 2GHz
Supplier Device Package: CMPAK-4
на замовлення 8983 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.31 грн |
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Технічний опис BFG310W/XR,115 NXP USA Inc.
Description: RF TRANS NPN 6V 14GHZ CMPAK-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Gain: 18dB, Power - Max: 60mW, Current - Collector (Ic) (Max): 10mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1dB @ 2GHz, Supplier Device Package: CMPAK-4.
Інші пропозиції BFG310W/XR,115
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BFG310W/XR,115 | Виробник : NXP Semiconductors | Trans RF BJT NPN 6V 0.01A 60mW 4-Pin(3+Tab) CMPAK T/R |
товар відсутній |
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BFG310W/XR,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 6V 14GHZ CMPAK-4 Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Gain: 18dB Power - Max: 60mW Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 2GHz Supplier Device Package: CMPAK-4 |
товар відсутній |
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BFG310W/XR,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 6V 14GHZ CMPAK-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Gain: 18dB Power - Max: 60mW Current - Collector (Ic) (Max): 10mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 2GHz Supplier Device Package: CMPAK-4 |
товар відсутній |
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BFG310W/XR,115 | Виробник : NXP Semiconductors | RF Bipolar Transistors TAPE-7 TNS-RFSS |
товар відсутній |
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BFG310W/XR,115 | Виробник : onsemi / Fairchild | Bipolar Transistors - BJT |
товар відсутній |