Технічний опис BFG325W/XR,115 NXP Semiconductors
Description: RF TRANS NPN 6V 14GHZ CMPAK-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Gain: 18.3dB, Power - Max: 210mW, Current - Collector (Ic) (Max): 35mA, Voltage - Collector Emitter Breakdown (Max): 6V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V, Frequency - Transition: 14GHz, Noise Figure (dB Typ @ f): 1.1dB @ 2GHz, Supplier Device Package: CMPAK-4.
Інші пропозиції BFG325W/XR,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BFG325W/XR,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 6V 14GHZ CMPAK-4Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Gain: 18.3dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Supplier Device Package: CMPAK-4 |
товару немає в наявності |
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BFG325W/XR,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 6V 14GHZ CMPAK-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Gain: 18.3dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 6V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1.1dB @ 2GHz Supplier Device Package: CMPAK-4 |
товару немає в наявності |