Технічний опис BFG425W,115 NXP Semiconductors
Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 20dB, Power - Max: 135mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V, Frequency - Transition: 25GHz, Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz, Supplier Device Package: CMPAK-4, Part Status: Obsolete.
Інші пропозиції BFG425W,115
| Фото | Назва | Виробник | Інформація |
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BFG425W,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 135mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Supplier Device Package: CMPAK-4 Part Status: Obsolete |
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BFG425W,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 4.5V 25GHZ CMPAK-4 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 135mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 2V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz Supplier Device Package: CMPAK-4 Part Status: Obsolete |
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| BFG425W,115 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
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BFG425W,115 | Виробник : NXP Semiconductors |
RF Bipolar Transistors NPN 4.5V 25GHZ |
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