Технічний опис BFG520/X,215 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SOT143B, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 300mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz, Supplier Device Package: SOT-143B, Part Status: Obsolete.
Інші пропозиції BFG520/X,215
| Фото | Назва | Виробник | Інформація |
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BFG520/X,215 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 9GHZ SOT143BPackaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SOT-143B Part Status: Obsolete |
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BFG520/X,215 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT143B Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 300mW Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz Supplier Device Package: SOT-143B Part Status: Obsolete |
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BFG520/X,215 | Виробник : NXP Semiconductors |
RF Bipolar Transistors TAPE7 TNS-RFSS |
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| BFG520/X,215 | Виробник : onsemi / Fairchild |
Bipolar Transistors - BJT |
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