Технічний опис BFG540,215 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SOT143B, Packaging: Tape & Reel (TR), Package / Case: TO-253-4, TO-253AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 400mW, Current - Collector (Ic) (Max): 120mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz, Supplier Device Package: SOT-143B, Part Status: Obsolete.
Інші пропозиції BFG540,215
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BFG540,215 | Виробник : NXP USA Inc. |
 Description: RF TRANS NPN 15V 9GHZ SOT143BPackaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz Supplier Device Package: SOT-143B Part Status: Obsolete |
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BFG540,215 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT143B Packaging: Cut Tape (CT) Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.3dB ~ 1.8dB @ 900MHz Supplier Device Package: SOT-143B Part Status: Obsolete |
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BFG540,215 | Виробник : NXP Semiconductors |
RF Bipolar Transistors TAPE7 TNS-RFSS |
товар відсутній |