BFL4001 onsemi

Description: MOSFET N-CH 900V 4.1A TO220FI, Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FI(LS), Power Dissipation (Max): 2W (Ta), 37W (Tc), Rds On (Max) @ Id, Vgs: 2.7Ohm @ 3.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bag.