Технічний опис BFM520,115 NXP Semiconductors
Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOP, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 175°C (TJ), Power - Max: 1W, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz, Supplier Device Package: 6-TSSOP, Part Status: Obsolete.
Інші пропозиції BFM520,115
| Фото | Назва | Виробник | Інформація |
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BFM520,115 | Виробник : NXP USA Inc. |
 Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOPPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 175°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Supplier Device Package: 6-TSSOP Part Status: Obsolete |
товар відсутній |
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BFM520,115 | Виробник : NXP USA Inc. |
Description: RF TRANS 2 NPN 8V 9GHZ 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 175°C (TJ) Power - Max: 1W Current - Collector (Ic) (Max): 70mA Voltage - Collector Emitter Breakdown (Max): 8V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.2dB ~ 2.1dB @ 900MHz Supplier Device Package: 6-TSSOP Part Status: Obsolete |
товар відсутній |