BFP520FE6327 Infineon Technologies
Виробник: Infineon TechnologiesDescription: LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 22.5dB
Power - Max: 100mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
Frequency - Transition: 45GHz
Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1888+ | 10.56 грн |
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Технічний опис BFP520FE6327 Infineon Technologies
Description: RF TRANS NPN 3.5V 45GHZ 4TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 22.5dB, Power - Max: 100mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 3.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V, Frequency - Transition: 45GHz, Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.
Інші пропозиції BFP520FE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BFP 520F E6327 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 3.5V 45GHZ 4TSFP Packaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
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BFP 520F E6327 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 3.5V 45GHZ 4TSFP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 22.5dB Power - Max: 100mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V Frequency - Transition: 45GHz Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
товар відсутній |