BFP540FESDH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
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Технічний опис BFP540FESDH6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 20dB, Power - Max: 250mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V, Frequency - Transition: 30GHz, Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Інші пропозиції BFP540FESDH6327XTSA1 за ціною від 18.40 грн до 48.10 грн
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BFP540FESDH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V 30GHZ 4-TSFP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 250mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 5V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V Frequency - Transition: 30GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz Supplier Device Package: 4-TSFP Part Status: Active |
на замовлення 22 шт: термін постачання 21-31 дні (днів) |
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BFP540FESDH6327XTSA1 | Infineon Technologies |
RF Bipolar Transistors RF BIP TRANSISTOR |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| BFP540FESDH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
Part Status: Active
на замовлення 22 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 33.30 грн |
| 14+ | 22.45 грн |
| BFP540FESDH6327XTSA1 |
|
Виробник: Infineon Technologies
RF Bipolar Transistors RF BIP TRANSISTOR
RF Bipolar Transistors RF BIP TRANSISTOR
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.10 грн |
| 11+ | 29.99 грн |
| 100+ | 21.78 грн |
| 500+ | 18.40 грн |