Технічний опис BFP620E7764 INF
Description: RF BIPOLAR TRANSISTOR, Packaging: Bulk, Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21.5dB, Power - Max: 185mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V, Frequency - Transition: 65GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-SOT343-4, Part Status: Active.
Інші пропозиції BFP620E7764
Фото | Назва | Виробник | Інформація |
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BFP620E7764 | Виробник : Infineon Technologies |
Description: RF BIPOLAR TRANSISTOR Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21.5dB Power - Max: 185mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-SOT343-4 Part Status: Active |
товар відсутній |
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BFP 620 E7764 | Виробник : Infineon Technologies | RF Bipolar Transistors NPN 2.3 V 80 mA |
товар відсутній |