BFP620FH7764XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
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Технічний опис BFP620FH7764XTSA1 Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 21dB ~ 10dB, Power - Max: 185mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V, Frequency - Transition: 65GHz, Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz, Supplier Device Package: 4-TSFP, Part Status: Active.
Інші пропозиції BFP620FH7764XTSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
BFP620FH7764XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 21dB ~ 10dB Power - Max: 185mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 2.8V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V Frequency - Transition: 65GHz Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz Supplier Device Package: 4-TSFP Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BFP620FH7764XTSA1 | Infineon Technologies |
RF Bipolar Transistors Y |
товару немає в наявності |
В кошику од. на суму грн. |
| BFP620FH7764XTSA1 |
|
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
Description: RF TRANS NPN 2.8V 65GHZ 4-TSFP
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB ~ 10dB
Power - Max: 185mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
Frequency - Transition: 65GHz
Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Supplier Device Package: 4-TSFP
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BFP620FH7764XTSA1 |
|
Виробник: Infineon Technologies
RF Bipolar Transistors Y
RF Bipolar Transistors Y
товару немає в наявності
В кошику
од. на суму грн.