Технічний опис BFP640FE6327 INFINEON
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 23dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 4.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V, Frequency - Transition: 40GHz, Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz, Supplier Device Package: 4-TSFP, Part Status: Obsolete.
Інші пропозиції BFP640FE6327
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BFP640FE6327 | Виробник : Infineon Technologies |
 Description: RF TRANS NPN 4.5V 40GHZ 4-TSFPPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 23dB Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
товару немає в наявності |
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BFP640FE6327 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 4.5V 40GHZ 4-TSFP Packaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 23dB Power - Max: 200mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V Frequency - Transition: 40GHz Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz Supplier Device Package: 4-TSFP Part Status: Obsolete |
товару немає в наявності |