BFP740E6327HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: RF TRANS NPN 4.7V 42GHZ SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 4.7V
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V
Frequency - Transition: 42GHz
Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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Технічний опис BFP740E6327HTSA1 Infineon Technologies
Description: RF TRANS NPN 4.7V 42GHZ SOT-343, Packaging: Tape & Reel (TR), Package / Case: SC-82A, SOT-343, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 27dB, Power - Max: 160mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 4.7V, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V, Frequency - Transition: 42GHz, Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz, Supplier Device Package: PG-SOT343-3D, Part Status: Obsolete.
Інші пропозиції BFP740E6327HTSA1
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BFP740E6327HTSA1 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 4.7V 42GHZ SOT-343 Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 27dB Power - Max: 160mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 4.7V DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 25mA, 3V Frequency - Transition: 42GHz Noise Figure (dB Typ @ f): 0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
товару немає в наявності |
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| BFP740E6327HTSA1 | Виробник : Infineon Technologies |
RF Bipolar Transistors |
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