Технічний опис BFQ540,115 NXP Semiconductors
Description: RF TRANS NPN 15V 9GHZ SOT89-3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Power - Max: 1.2W, Current - Collector (Ic) (Max): 120mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V, Frequency - Transition: 9GHz, Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz, Supplier Device Package: SOT-89-3.
Інші пропозиції BFQ540,115
Фото | Назва | Виробник | Інформація |
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BFQ540,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz Supplier Device Package: SOT-89-3 |
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BFQ540,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 9GHZ SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Power - Max: 1.2W Current - Collector (Ic) (Max): 120mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V Frequency - Transition: 9GHz Noise Figure (dB Typ @ f): 1.9dB ~ 2.4dB @ 900MHz Supplier Device Package: SOT-89-3 |
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BFQ540,115 | Виробник : Diodes Incorporated | Bipolar Transistors - BJT |
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BFQ540,115 | Виробник : NXP Semiconductors | RF Bipolar Transistors TAPE-7 TNS-RFSS |
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