BFR193WE6327

BFR193WE6327 Infineon Technologies


8552infineon_high_linearity_lna_bfr193w.pdffolderiddb3a30431400ef6801.pdf Виробник: Infineon Technologies
Trans RF BJT NPN 12V 0.08A 580mW Automotive 3-Pin SOT-323 T/R
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Технічний опис BFR193WE6327 Infineon Technologies

Description: RF TRANS NPN 12V 8GHZ SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 10.5dB ~ 16dB, Power - Max: 580mW, Current - Collector (Ic) (Max): 80mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V, Frequency - Transition: 8GHz, Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, Supplier Device Package: PG-SOT323, Part Status: Obsolete.

Інші пропозиції BFR193WE6327

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BFR 193W E6327 BFR 193W E6327 Виробник : Infineon Technologies bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674 Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
товар відсутній
BFR 193W E6327 BFR 193W E6327 Виробник : Infineon Technologies bfr193w.pdf?folderId=db3a30431400ef68011425b1354605c1&fileId=db3a30431400ef68011426b3b6650674 Description: RF TRANS NPN 12V 8GHZ SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
товар відсутній
BFR193WE6327 BFR193WE6327 Виробник : Infineon Technologies INFNS10702-1.pdf?t.download=true&u=5oefqw Description: HIGH LINEARITY TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Part Status: Active
товар відсутній