BFR750L3RHE6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: RF TRANS NPN 4.7V 37GHZ TSLP-3
Part Status: Obsolete
Supplier Device Package: PG-TSLP-3
Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz
Frequency - Transition: 37GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V
Voltage - Collector Emitter Breakdown (Max): 4.7V
Current - Collector (Ic) (Max): 90mA
Power - Max: 360mW
Gain: 21dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
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Технічний опис BFR750L3RHE6327XTSA1 Infineon Technologies
Description: RF TRANS NPN 4.7V 37GHZ TSLP-3, Part Status: Obsolete, Supplier Device Package: PG-TSLP-3, Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz, Frequency - Transition: 37GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V, Voltage - Collector Emitter Breakdown (Max): 4.7V, Current - Collector (Ic) (Max): 90mA, Power - Max: 360mW, Gain: 21dB, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR).
Інші пропозиції BFR750L3RHE6327XTSA1
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BFR750L3RHE6327XTSA1 | Виробник : Infineon Technologies |
Description: RF TRANS NPN 4.7V 37GHZ TSLP-3 Part Status: Obsolete Supplier Device Package: PG-TSLP-3 Noise Figure (dB Typ @ f): 0.6dB ~ 1.1dB @ 1.8GHz ~ 6GHz Frequency - Transition: 37GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 60mA, 3V Voltage - Collector Emitter Breakdown (Max): 4.7V Current - Collector (Ic) (Max): 90mA Power - Max: 360mW Gain: 21dB Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
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