BFU520AR NXP Semiconductors
Виробник: NXP Semiconductors
Trans RF BJT NPN 16V 0.05A 450mW Automotive AEC-Q101 3-Pin TO-236AB T/R
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Технічний опис BFU520AR NXP Semiconductors
Description: RF TRANS NPN 12V 10GHZ SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -40°C ~ 150°C (TJ), Gain: 18dB, Power - Max: 450mW, Current - Collector (Ic) (Max): 30mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V, Frequency - Transition: 10GHz, Noise Figure (dB Typ @ f): 0.7dB @ 900MHz, Supplier Device Package: SOT-23 (TO-236AB), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції BFU520AR
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BFU520AR | NXP |
RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount TO-236AB (SOT23) Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
| BFU520AR | NXP |
RF TRANS NPN 12V 10GHZ SOT-23-3 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
|
BFU520AR | NXP USA Inc. |
Description: RF TRANS NPN 12V 10GHZ SOT-23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Gain: 18dB Power - Max: 450mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Supplier Device Package: SOT-23 (TO-236AB) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
BFU520AR | NXP USA Inc. |
Description: RF TRANS NPN 12V 10GHZ SOT-23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Gain: 18dB Power - Max: 450mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V Frequency - Transition: 10GHz Noise Figure (dB Typ @ f): 0.7dB @ 900MHz Supplier Device Package: SOT-23 (TO-236AB) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
BFU520AR | NXP Semiconductors |
RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor |
товару немає в наявності |
В кошику од. на суму грн. |
| BFU520AR |
![]() |
Виробник: NXP
RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount TO-236AB (SOT23) Транзистори
RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount TO-236AB (SOT23) Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| BFU520AR |
![]() |
Виробник: NXP
RF TRANS NPN 12V 10GHZ SOT-23-3 Транзистори
RF TRANS NPN 12V 10GHZ SOT-23-3 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| BFU520AR |
![]() |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 10GHZ SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 18dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 12V 10GHZ SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 18dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BFU520AR |
![]() |
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 10GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 18dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: RF TRANS NPN 12V 10GHZ SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 18dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
Frequency - Transition: 10GHz
Noise Figure (dB Typ @ f): 0.7dB @ 900MHz
Supplier Device Package: SOT-23 (TO-236AB)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BFU520AR |
![]() |
Виробник: NXP Semiconductors
RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
товару немає в наявності
В кошику
од. на суму грн.



