Технічний опис BFU580GX NXP Semiconductors
Description: RF TRANS NPN 12V 11GHZ SC-73, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -40°C ~ 150°C (TJ), Gain: 10.5dB, Power - Max: 1W, Current - Collector (Ic) (Max): 60mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V, Frequency - Transition: 11GHz, Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz, Supplier Device Package: SC-73, Part Status: Active.
Інші пропозиції BFU580GX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BFU580GX | NXP |
 Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 1 W, 30 mA, SOT-223 Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
BFU580GX | NXP USA Inc. |
Description: RF TRANS NPN 12V 11GHZ SC-73 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Gain: 10.5dB Power - Max: 1W Current - Collector (Ic) (Max): 60mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz Supplier Device Package: SC-73 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
BFU580GX | NXP USA Inc. |
Description: RF TRANS NPN 12V 11GHZ SC-73 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -40°C ~ 150°C (TJ) Gain: 10.5dB Power - Max: 1W Current - Collector (Ic) (Max): 60mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V Frequency - Transition: 11GHz Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz Supplier Device Package: SC-73 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BFU580GX | NXP Semiconductors |
RF Bipolar Transistors NPN wideband silicon RF transistor |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BFU580GX | NXP |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 60mA; 1W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 12V Collector current: 60mA Power dissipation: 1W Case: SOT223 Current gain: 60...130 Mounting: SMD Kind of package: reel; tape Frequency: 11GHz |
товару немає в наявності |
В кошику од. на суму грн. |
| BFU580GX |
|
Виробник: NXP
Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 1 W, 30 mA, SOT-223 Транзистори
Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 1 W, 30 mA, SOT-223 Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| BFU580GX |
|
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 11GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Supplier Device Package: SC-73
Part Status: Active
Description: RF TRANS NPN 12V 11GHZ SC-73
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Supplier Device Package: SC-73
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BFU580GX |
|
Виробник: NXP USA Inc.
Description: RF TRANS NPN 12V 11GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Supplier Device Package: SC-73
Part Status: Active
Description: RF TRANS NPN 12V 11GHZ SC-73
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -40°C ~ 150°C (TJ)
Gain: 10.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 60mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 30mA, 8V
Frequency - Transition: 11GHz
Noise Figure (dB Typ @ f): 1.4dB @ 1.8GHz
Supplier Device Package: SC-73
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BFU580GX |
|
Виробник: NXP Semiconductors
RF Bipolar Transistors NPN wideband silicon RF transistor
RF Bipolar Transistors NPN wideband silicon RF transistor
товару немає в наявності
В кошику
од. на суму грн.
| BFU580GX |
|
Виробник: NXP
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 60mA; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 60mA
Power dissipation: 1W
Case: SOT223
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 11GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 60mA; 1W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 60mA
Power dissipation: 1W
Case: SOT223
Current gain: 60...130
Mounting: SMD
Kind of package: reel; tape
Frequency: 11GHz
товару немає в наявності
В кошику
од. на суму грн.