BFU730LXZ NXP USA Inc.
Виробник: NXP USA Inc.
Description: RF TRANS NPN 3V 53GHZ DFN1006C-3
Supplier Device Package: DFN1006C-3
Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
Frequency - Transition: 53GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
Voltage - Collector Emitter Breakdown (Max): 3V
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 15.8dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 6+ | 60.92 грн |
| 10+ | 36.04 грн |
| 100+ | 23.32 грн |
| 500+ | 16.74 грн |
| 1000+ | 15.08 грн |
| 2000+ | 13.68 грн |
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Технічний опис BFU730LXZ NXP USA Inc.
Description: RF TRANS NPN 3V 53GHZ DFN1006C-3, Supplier Device Package: DFN1006C-3, Noise Figure (dB Typ @ f): 0.75dB @ 6GHz, Frequency - Transition: 53GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V, Voltage - Collector Emitter Breakdown (Max): 3V, Current - Collector (Ic) (Max): 30mA, Power - Max: 160mW, Gain: 15.8dB, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції BFU730LXZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BFU730LXZ | NXP USA Inc. |
Description: RF TRANS NPN 3V 53GHZ DFN1006C-3 Supplier Device Package: DFN1006C-3 Noise Figure (dB Typ @ f): 0.75dB @ 6GHz Frequency - Transition: 53GHz DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V Voltage - Collector Emitter Breakdown (Max): 3V Current - Collector (Ic) (Max): 30mA Power - Max: 160mW Gain: 15.8dB Transistor Type: NPN Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BFU730LXZ | NXP Semiconductors |
RF Bipolar Transistors SiGe:C MMIC Transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| BFU730LXZ |
|
Виробник: NXP USA Inc.
Description: RF TRANS NPN 3V 53GHZ DFN1006C-3
Supplier Device Package: DFN1006C-3
Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
Frequency - Transition: 53GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
Voltage - Collector Emitter Breakdown (Max): 3V
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 15.8dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
Description: RF TRANS NPN 3V 53GHZ DFN1006C-3
Supplier Device Package: DFN1006C-3
Noise Figure (dB Typ @ f): 0.75dB @ 6GHz
Frequency - Transition: 53GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 3V
Voltage - Collector Emitter Breakdown (Max): 3V
Current - Collector (Ic) (Max): 30mA
Power - Max: 160mW
Gain: 15.8dB
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BFU730LXZ |
|
Виробник: NXP Semiconductors
RF Bipolar Transistors SiGe:C MMIC Transistor
RF Bipolar Transistors SiGe:C MMIC Transistor
товару немає в наявності
В кошику
од. на суму грн.