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BFU768F115

BFU768F115 NXP USA Inc.

BFU768F.pdf
Виробник: NXP USA Inc.
Description: NPN WIDEBAND SILICON GERMANIUM R
Packaging: Bulk
Package / Case: SOT-343F
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13.1dB
Power - Max: 220mW
Current - Collector (Ic) (Max): 70mA
Voltage - Collector Emitter Breakdown (Max): 2.8V
DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz
Supplier Device Package: 4-DFP
Part Status: Active
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Технічний опис BFU768F115 NXP USA Inc.

Description: NPN WIDEBAND SILICON GERMANIUM R, Packaging: Bulk, Package / Case: SOT-343F, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 13.1dB, Power - Max: 220mW, Current - Collector (Ic) (Max): 70mA, Voltage - Collector Emitter Breakdown (Max): 2.8V, DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V, Noise Figure (dB Typ @ f): 1.1dB @ 2.4GHz, Supplier Device Package: 4-DFP, Part Status: Active.