BFY90 TIN/LEAD Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: 15V 25MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
Supplier Device Package: TO-72
Description: 15V 25MA 200MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Gain: 23dB
Power - Max: 200mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
Supplier Device Package: TO-72
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BFY90 TIN/LEAD Central Semiconductor Corp
Description: 15V 25MA 200MW TH TRANSISTOR-SMA, Packaging: Box, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Gain: 23dB, Power - Max: 200mW, Current - Collector (Ic) (Max): 25mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V, Frequency - Transition: 1.4GHz, Noise Figure (dB Typ @ f): 5.5dB @ 800MHz, Supplier Device Package: TO-72.
Інші пропозиції BFY90 TIN/LEAD
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BFY90 TIN/LEAD | Виробник : Central Semiconductor |
 RF Bipolar Transistors NPN RF 30Vcbo 30Vcer 15Vceo 25mA |
товару немає в наявності |