BLP05H6110XRY Ampleon USA Inc.
Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V 4HSOPF
Power - Output: 110W
Configuration: Dual, Common Source
Frequency: 108MHz
Mounting Type: Surface Mount
Package / Case: SOT-1223-2
Packaging: Tape & Reel (TR)
Current - Test: 20 mA
Voltage - Test: 50 V
Voltage - Rated: 135 V
Part Status: Active
Supplier Device Package: 4-HSOPF
Technology: LDMOS
Gain: 27dB
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Технічний опис BLP05H6110XRY Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V 4HSOPF, Power - Output: 110W, Configuration: Dual, Common Source, Frequency: 108MHz, Mounting Type: Surface Mount, Package / Case: SOT-1223-2, Packaging: Tape & Reel (TR), Current - Test: 20 mA, Voltage - Test: 50 V, Voltage - Rated: 135 V, Part Status: Active, Supplier Device Package: 4-HSOPF, Technology: LDMOS, Gain: 27dB.
Інші пропозиції BLP05H6110XRY
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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BLP05H6110XRY | Ampleon USA Inc. |
Description: RF MOSFET LDMOS 50V 4HSOPF Packaging: Cut Tape (CT) Package / Case: SOT-1223-2 Mounting Type: Surface Mount Frequency: 108MHz Configuration: Dual, Common Source Power - Output: 110W Gain: 27dB Technology: LDMOS Supplier Device Package: 4-HSOPF Part Status: Active Voltage - Rated: 135 V Voltage - Test: 50 V Current - Test: 20 mA |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BLP05H6110XRY | NXP Semiconductors |
RF MOSFET Transistors Power LDMOS Transistor |
товару немає в наявності |
В кошику од. на суму грн. |
| BLP05H6110XRY |
|
Виробник: Ampleon USA Inc.
Description: RF MOSFET LDMOS 50V 4HSOPF
Packaging: Cut Tape (CT)
Package / Case: SOT-1223-2
Mounting Type: Surface Mount
Frequency: 108MHz
Configuration: Dual, Common Source
Power - Output: 110W
Gain: 27dB
Technology: LDMOS
Supplier Device Package: 4-HSOPF
Part Status: Active
Voltage - Rated: 135 V
Voltage - Test: 50 V
Current - Test: 20 mA
Description: RF MOSFET LDMOS 50V 4HSOPF
Packaging: Cut Tape (CT)
Package / Case: SOT-1223-2
Mounting Type: Surface Mount
Frequency: 108MHz
Configuration: Dual, Common Source
Power - Output: 110W
Gain: 27dB
Technology: LDMOS
Supplier Device Package: 4-HSOPF
Part Status: Active
Voltage - Rated: 135 V
Voltage - Test: 50 V
Current - Test: 20 mA
товару немає в наявності
В кошику
од. на суму грн.
| BLP05H6110XRY |
|
Виробник: NXP Semiconductors
RF MOSFET Transistors Power LDMOS Transistor
RF MOSFET Transistors Power LDMOS Transistor
товару немає в наявності
В кошику
од. на суму грн.