Технічний опис BMS3003 ON Semiconductor
Description: MOSFET P-CH 60V 78A TO220ML, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 78A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V, Power Dissipation (Max): 2W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: TO-220ML, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V.
Інші пропозиції BMS3003
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BMS3003 | Виробник : onsemi |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Ta) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 39A, 10V Power Dissipation (Max): 2W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: TO-220ML Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13200 pF @ 20 V |
товару немає в наявності |
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BMS3003 | Виробник : onsemi |
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товару немає в наявності |