Технічний опис BQ4011LYMA-70N TI
Description: IC NVSRAM 256KBIT PARALLEL 28DIP, DigiKey Programmable: Not Verified, Memory Organization: 32K x 8, Access Time: 70 ns, Memory Interface: Parallel, Write Cycle Time - Word, Page: 70ns, Supplier Device Package: 28-DIP Module (18.42x37.72), Memory Format: NVSRAM, Technology: NVSRAM (Non-Volatile SRAM), Voltage - Supply: 3V ~ 3.6V, Operating Temperature: -40°C ~ 85°C (TA), Memory Type: Non-Volatile, Memory Size: 256Kbit, Mounting Type: Through Hole, Package / Case: 28-DIP Module (0.61", 15.49mm), Packaging: Tube.
Інші пропозиції BQ4011LYMA-70N
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BQ4011LYMA-70N | Виробник : Texas Instruments |
 Description: IC NVSRAM 256KBIT PARALLEL 28DIPDigiKey Programmable: Not Verified Memory Organization: 32K x 8 Access Time: 70 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 70ns Supplier Device Package: 28-DIP Module (18.42x37.72) Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 256Kbit Mounting Type: Through Hole Package / Case: 28-DIP Module (0.61", 15.49mm) Packaging: Tube |
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