BSB013NE2LXIXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
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Технічний опис BSB013NE2LXIXUMA1 Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: MG-WDSON-2, CanPAK M™, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 2.8W (Ta), 57W (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-WDSON, Packaging: Tape & Reel (TR).
Інші пропозиції BSB013NE2LXIXUMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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BSB013NE2LXIXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 36A/163A 2WDSONInput Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
BSB013NE2LXIXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 25V 36A/163A 2WDSONInput Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: MG-WDSON-2, CanPAK M™ Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-WDSON Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
|
BSB013NE2LXIXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W Kind of channel: enhancement Type of transistor: N-MOSFET Technology: OptiMOS™ Mounting: SMD Polarisation: unipolar On-state resistance: 1.3mΩ Gate-source voltage: ±20V Drain-source voltage: 25V Power dissipation: 57W Drain current: 103A Case: CanPAK™ MX; MG-WDSON-2 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| BSB013NE2LXIXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| BSB013NE2LXIXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 36A/163A 2WDSON
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: MG-WDSON-2, CanPAK M™
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-WDSON
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| BSB013NE2LXIXUMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™
Mounting: SMD
Polarisation: unipolar
On-state resistance: 1.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 25V
Power dissipation: 57W
Drain current: 103A
Case: CanPAK™ MX; MG-WDSON-2
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.


