BSC004NE2LS5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис BSC004NE2LS5ATMA1 Infineon Technologies
N-Channel 25 V 40A (Ta), 479A (Tc) 2.5W (Ta), 188W (Tc) Surface Mount PG-TDSON-8 Транзистори.
Інші пропозиції BSC004NE2LS5ATMA1 за ціною від 60.47 грн до 185.55 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC004NE2LS5ATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2V @ 10mA Power Dissipation (Max): 2.5W (Ta), 188W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc) |
на замовлення 19546 шт: термін постачання 21-31 дні (днів) |
|
| BSC004NE2LS5ATMA1 |
|
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 10mA
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
Description: TRENCH <= 40V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 10mA
Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
на замовлення 19546 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 185.55 грн |
| 10+ | 115.53 грн |
| 100+ | 79.37 грн |
| 500+ | 60.47 грн |