| Кількість | Ціна |
|---|---|
| 2+ | 185.02 грн |
| 10+ | 135.36 грн |
| 100+ | 81.76 грн |
| 500+ | 69.07 грн |
| 1000+ | 63.65 грн |
| 2500+ | 60.26 грн |
| 5000+ | 58.29 грн |
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Технічний опис BSC011N03LSTATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V, Power Dissipation (Max): 3W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V.
Інші пропозиції BSC011N03LSTATMA1 за ціною від 69.36 грн до 203.78 грн
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BSC011N03LSTATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 39A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V |
на замовлення 4598 шт: термін постачання 21-31 дні (днів) |
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| BSC011N03LSTATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
Description: MOSFET N-CH 30V 39A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 15 V
на замовлення 4598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 203.78 грн |
| 10+ | 127.13 грн |
| 100+ | 87.89 грн |
| 500+ | 69.36 грн |