BSC016N03LSGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 32A/100A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 125W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Part Status: Not For New Designs, Supplier Device Package: PG-TDSON-8-1.