BSC016N06NSATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 139W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 95µA, Supplier Device Package: PG-TDSON-8 FL, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V.