Технічний опис BSC019N02KSGAUMA1 Infineon Technologies
Description: MOSFET N-CH 20V 30A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 350µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V.
Інші пропозиції BSC019N02KSGAUMA1
| Фото | Назва | Виробник | Інформація |
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BSC019N02KSGAUMA1 | Виробник : Infineon Technologies |
 Trans MOSFET N-CH 20V 30A Automotive 8-Pin TDSON EP T/R |
товару немає в наявності |
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| BSC019N02KSGAUMA1 | Виробник : INFINEON TECHNOLOGIES |
BSC019N02KSGAUMA1 SMD N channel transistors |
товару немає в наявності |
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BSC019N02KSGAUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 30A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 350µA Supplier Device Package: PG-TDSON-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 10 V |
товару немає в наявності |