| Кількість | Ціна |
|---|---|
| 1+ | 336.32 грн |
| 10+ | 247.22 грн |
| 100+ | 153.65 грн |
| 500+ | 126.87 грн |
| 1000+ | 126.16 грн |
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Технічний опис BSC019N08NS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TSON-8-3, Vgs(th) (Max) @ Id: 3.8V @ 146µA, Power Dissipation (Max): 3W (Ta), 214W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції BSC019N08NS5ATMA1 за ціною від 127.28 грн до 371.88 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC019N08NS5ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 80V 28A/237A TSON-8Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TSON-8-3 Vgs(th) (Max) @ Id: 3.8V @ 146µA Power Dissipation (Max): 3W (Ta), 214W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 4866 шт: термін постачання 21-31 дні (днів) |
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| BSC019N08NS5ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 28A/237A TSON-8
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TSON-8-3
Vgs(th) (Max) @ Id: 3.8V @ 146µA
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 4866 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 371.88 грн |
| 10+ | 237.77 грн |
| 100+ | 169.55 грн |
| 500+ | 131.79 грн |
| 1000+ | 127.28 грн |