BSC022N03SG INF

Description: MOSFET N-CH 30V 28A/100A TDSON, Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TDSON-8-1, Vgs(th) (Max) @ Id: 2V @ 110µA, Power Dissipation (Max): 2.8W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5.