BSC025N03LSGATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 36.42 грн |
10000+ | 33.45 грн |
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Технічний опис BSC025N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-5, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V.
Інші пропозиції BSC025N03LSGATMA1 за ціною від 30.88 грн до 99.7 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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BSC025N03LSGATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 25A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V |
на замовлення 38848 шт: термін постачання 21-31 дні (днів) |
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BSC025N03LSGATMA1 | Виробник : INFINEON |
Description: INFINEON - BSC025N03LSGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 0.0021 ohm, SuperSOT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 83W Anzahl der Pins: 8Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0021ohm |
на замовлення 4520 шт: термін постачання 21-31 дні (днів) |
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BSC025N03LSGATMA1 | Виробник : Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
на замовлення 5000 шт: термін постачання 244-253 дні (днів) |
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BSC025N03LSGATMA1 | Виробник : Infineon Technologies | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R |
товар відсутній |
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BSC025N03LSGATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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BSC025N03LSGATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 83W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 83W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Kind of channel: enhanced |
товар відсутній |