BSC026N02KSGAUMA1 Infineon Technologies
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 36.45 грн |
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Технічний опис BSC026N02KSGAUMA1 Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V, Power Dissipation (Max): 2.8W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 200µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V.
Інші пропозиції BSC026N02KSGAUMA1 за ціною від 55.51 грн до 134.32 грн
| Фото | Назва | Виробник | Інформація |
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BSC026N02KSGAUMA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 20V 25A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
на замовлення 3490 шт: термін постачання 21-31 дні (днів) |
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BSC026N02KSGAUMA1 | Виробник : Infineon Technologies |
MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 |
на замовлення 1189 шт: термін постачання 21-30 дні (днів) |
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BSC026N02KSGAUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8 Technology: OptiMOS™ 2 Mounting: SMD Power dissipation: 78W Case: PG-TDSON-8 Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V On-state resistance: 2.6mΩ кількість в упаковці: 5000 шт |
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BSC026N02KSGAUMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 20V 25A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
товар відсутній |
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BSC026N02KSGAUMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 100A; 78W; PG-TDSON-8 Technology: OptiMOS™ 2 Mounting: SMD Power dissipation: 78W Case: PG-TDSON-8 Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V On-state resistance: 2.6mΩ |
товар відсутній |