BSC026N04LSATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
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Технічний опис BSC026N04LSATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V, Power Dissipation (Max): 2.5W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TDSON-8-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V.
Інші пропозиції BSC026N04LSATMA1 за ціною від 24.88 грн до 103.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC026N04LSATMA1 | Infineon Technologies |
MOSFETs TRENCH <= 40V |
на замовлення 8599 шт: термін постачання 21-30 дні (днів) |
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BSC026N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 23A/100A TDSONRds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 63W (Tc) |
на замовлення 8335 шт: термін постачання 21-31 дні (днів) |
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| BSC026N04LSATMA1 |
![]() |
Виробник: Infineon Technologies
MOSFETs TRENCH <= 40V
MOSFETs TRENCH <= 40V
на замовлення 8599 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 42.18 грн |
| 10+ | 37.45 грн |
| 25+ | 32.42 грн |
| 100+ | 28.05 грн |
| 250+ | 27.91 грн |
| 500+ | 26.36 грн |
| 1000+ | 24.88 грн |
| BSC026N04LSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
Description: MOSFET N-CH 40V 23A/100A TDSON
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 63W (Tc)
на замовлення 8335 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 63.38 грн |
| 100+ | 42.19 грн |
| 500+ | 31.06 грн |
| 1000+ | 28.32 грн |
| 2000+ | 27.22 грн |



