BSC027N06LS5ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
| Кількість | Ціна |
|---|---|
| 5000+ | 57.56 грн |
| 10000+ | 54.61 грн |
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Технічний опис BSC027N06LS5ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 49µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V.
Інші пропозиції BSC027N06LS5ATMA1 за ціною від 53.07 грн до 203.78 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BSC027N06LS5ATMA1 | Infineon Technologies |
MOSFETs DIFFERENTIATED MOSFETS |
на замовлення 10018 шт: термін постачання 21-30 дні (днів) |
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BSC027N06LS5ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 49µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V |
на замовлення 72752 шт: термін постачання 21-31 дні (днів) |
|
| BSC027N06LS5ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs DIFFERENTIATED MOSFETS
MOSFETs DIFFERENTIATED MOSFETS
на замовлення 10018 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.60 грн |
| 10+ | 127.26 грн |
| 100+ | 76.12 грн |
| 500+ | 62.45 грн |
| 2500+ | 61.81 грн |
| 5000+ | 53.07 грн |
| BSC027N06LS5ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 30 V
на замовлення 72752 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 203.78 грн |
| 10+ | 126.60 грн |
| 100+ | 87.19 грн |
| 500+ | 66.00 грн |
| 1000+ | 62.73 грн |