BSC030N03LSGATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
| Кількість | Ціна |
|---|---|
| 5000+ | 22.34 грн |
| 10000+ | 20.05 грн |
| 15000+ | 19.85 грн |
Відгуки про товар
Написати відгук
Технічний опис BSC030N03LSGATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 2.5W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TDSON-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V.
Інші пропозиції BSC030N03LSGATMA1 за ціною від 21.00 грн до 91.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BSC030N03LSGATMA1 | Infineon Technologies |
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3 |
на замовлення 8480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||
|
|
BSC030N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 23A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V |
на замовлення 19542 шт: термін постачання 21-31 дні (днів) |
|
| BSC030N03LSGATMA1 |
|
Виробник: Infineon Technologies
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3
MOSFETs N-Ch 30V 100A TDSON-8 OptiMOS 3
на замовлення 8480 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 87.99 грн |
| 10+ | 56.82 грн |
| 100+ | 33.62 грн |
| 500+ | 26.78 грн |
| 1000+ | 22.70 грн |
| 2500+ | 21.00 грн |
| BSC030N03LSGATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
Description: MOSFET N-CH 30V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
на замовлення 19542 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.19 грн |
| 10+ | 55.51 грн |
| 100+ | 36.72 грн |
| 500+ | 26.89 грн |
| 1000+ | 24.45 грн |
| 2000+ | 22.80 грн |